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 INTEGRATED CIRCUITS
DATA SHEET
TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
Product specification Supersedes data of 1998 Sep 09 File under Integrated Circuits, IC01 1999 Aug 19
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
FEATURES * Six input buffer amplifiers with low-pass filtering and virtually no offset * Universal photodiode IC interface using internal conversion resistors * RF data amplifier with wide bandwidth designed for data rates up to a maximum of 30x * Programmable RF gain for CD-A/V, CD-R, CD-R/W and CD-ROM applications * Programmable RF bandwidth for optimal playability * Radial error signal for fast track counting * Programmable RF/Fast Track Count (FTC) gain for optimal dynamic range * Fully automatic laser control including stabilization and on/off switch plus a separate supply for power efficiency * Automatic monitor diode polarity selection * Adjustable laser bandwidth and laser switch-on current slope using external capacitor * Protection circuit to prevent laser damage due to supply voltage dip * Optimized interconnection between data amplifier and Philips' digital signal processor family (CD7, ACE and MACE) * Wide supply voltage range * Wide temperature range * Low power consumption. GENERAL DESCRIPTION
TZA1015
The TZA1015 is a data amplifier and laser supply circuit for 3-beam pick-up detectors found in a wide range of CD and read-only optical systems. The device contains 6 transimpedance amplifiers to amplify and filter the focus and radial photo diode voltage input signals. The preamplifier forms a versatile, programmable interface from voltage output CD mechanisms to the Philips' digital signal processor family. The dynamic range of this preamplifier/processor combination can be optimized for the LF servo and RF data paths. The servo channel gain is set by the ADC range of the processor. The RF data channel can be programmed in the TZA1015 preamplifier. The programmable RF bandwidth allows this device to be used in CD-A/V applications or CD-R, CD-R/W and CD-ROM applications with a data rate up to a maximum of 30x. The RF and LF gain can be adapted for CD-A/V, CD-R and CD-ROM discs or CD-R/W discs by means of a gain switch. In addition to this gain switch the RF gain is programmable to guarantee optimal playability. In order to enable minimal access time the TZA1015 generates a Fast Track Count signal which enables the decoder (ACE or MACE) to count the number of tracks during a track jump. The device can accommodate astigmatic, single Foucault and double Foucault detectors and can be used with all laser and N- or P-sub monitor diodes. The Automatic Laser Power Control (ALPC) circuit will maintain control over the laser diode current. With an on-chip reference voltage generator, a constant and stabilized output power is ensured independent of ageing. A separate power supply connection allows the internal power dissipation to be reduced by connecting a low voltage supply.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TZA1015T SO28 DESCRIPTION plastic small outline package; 28 leads; body width 7.5 mm VERSION SOT136-1
1999 Aug 19
2
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
QUICK REFERENCE DATA SYMBOL Supply VDD(RF,LF) VDD(L) IOS B(-3dB) RF amplifier B(-3dB) -3 dB bandwidth programmable; GARF = open-circuit - - - td(f)(RF) Laser supply Io(LASER)(min) minimum laser output current VDD(L) = 3 V Vi(mon) monitor input voltage N-type monitor P-type monitor Temperature range Toper Tstg operating temperature storage temperature 0 -65 - - - - 0.150 - - - RF flatness delay - 10 20 50 - - - - supply voltage laser supply voltage 4.5 3 - 65 5.0 - - 90 PARAMETER CONDITIONS MIN. TYP.
TZA1015
MAX.
UNIT
5.5 5.5
V V
LF amplifiers channel matching -3 dB bandwidth 1 115 %FS kHz
MHz MHz MHz ns
0.4
100
mA V V C C
VDD(RF,LF) - 0.150 - 85 +150
1999 Aug 19
3
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
BLOCK DIAGRAM
TZA1015
handbook, full pagewidth
D1
6
+ + +
- - - - - -
+ + + + + +
22
O1
D2
7
21
O2
D3
8
20
O3
D4
9
+ + +
19
O4
S5
10
18
O5
11 S6
17
+
28 27 1 13
-
O6
15 25 26
FTC RFP RFN
GARF GSE RFBWS VCOM
VDD(LF)
14
Vref
TZA1015
V/I
(1)
MON
5
VGAP V/I
V/I
2 LD
4
CFIL
23
12
3 VDD(L)
24 GND
16
MGK356
VDD(RF) VDD(LF)
PWRON
(1) Bandgap reference voltage.
Fig.1 Block diagram.
1999 Aug 19
4
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
PINNING SYMBOL RFBWS LD VDD(L) CFIL MON D1 D2 D3 D4 S5 S6 VDD(LF) VCOM Vref FTC PWRON O6 O5 O4 O3 O2 O1 VDD(RF) GND RFP RFN GSE GARF PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 DESCRIPTION RF amplifier bandwidth select current output to the laser diode laser supply voltage external filter capacitor laser monitor diode input input photo diode amplifier 1 (central) input photo diode amplifier 2 (central) input photo diode amplifier 3 (central) input photo diode amplifier 4 (central) input photo diode amplifier 5 (satellite) input photo diode amplifier 6 (satellite) LF diode and FTC amplifier supply voltage common mode DC reference input DC reference voltage for biasing of Opto Electronic IC (OEIC) fast track count amplifier output power on/off switch (Vref bias generator always active) output photo diode amplifier 6 output photo diode amplifier 5 output photo diode amplifier 4 output photo diode amplifier 3 output photo diode amplifier 2 output photo diode amplifier 1 RF amplifier supply voltage ground positive output RF data amplifier negative output RF data amplifier gain select for CD, CD-R, CD-R/W; RF and FTC amplifiers gain adjust for RF and FTC amplifiers Fig.2 Pin configuration.
handbook, halfpage
TZA1015
RFBWS 1 LD 2 VDD(L) 3 CFIL 4 MON 5 D1 6 D2 7
28 GARF 27 GSE 26 RFN 25 RFP 24 GND 23 VDD(RF) 22 O1
TZA1015
D3 8 D4 9 S5 10 S6 11 VDD(LF) 12 VCOM 13 Vref 14
MGK355
21 O2 20 O3 19 O4 18 O5 17 O6 16 PWRON 15 FTC
1999 Aug 19
5
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDD(RF,LF) VI(n) Isource PARAMETER supply voltage input voltage for all pins source current pin FTC pin RFP pin RFN Tamb Pmax Note operating ambient temperature maximum power dissipation note 1 - - - -40 - 4 2 2 +100 700 CONDITIONS MIN. -0.5 -0.5 +5.5 MAX.
TZA1015
UNIT V
VDD(RF,LF) + 0.5 V mA mA mA C mW
1. Based on standard measurement for determining thermal resistance of the package. In accordance with MIL-STD 883C. CHARACTERISTICS VDD(LF) = VDD(RF) = VDD(L) = 5.0 V; Tamb = 25 C; PWRON = HIGH; GSE = LOW; GARF = open-circuit; RFBWS = HIGH; DC input voltages at pins VCOM, D1 to D4, S5 and S6 = 12VDD; output voltage at pins O1 to O6 = 0 V; IDD(L)(d) = 50 mA; CCFIL = 1 nF; unless otherwise specified. Diode input voltages all with respect to VCOM. SYMBOL Supplies VDD(RF,LF) VDD(L) IDD(LF) IDD(RF) IDD(L)(d) Iq Input voltages Vi(D1-D4,S5,S6) input signal voltage all inputs; range (with respect GSE = LOW to VCOM) all inputs; GSE = HIGH VI(CM) common mode DC reference input voltage range 0 0 1.6 - - - 0.6 0.15 V V supply voltage laser supply voltage LF supply current RF supply current laser diode supply current quiescent supply current PWRON = LOW 4.5 3 - - - - 5.0 - 13 20 50 - 5.5 5.5 - - 100 6 V V mA mA mA mA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDD(RF,LF) - 2.2 V
1999 Aug 19
6
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TZA1015
MAX.
UNIT
LF diode amplifiers ZCONV conversion impedance central diodes, D1 to D4 satellite diodes, S5 and S6 Io(LF) output current range central diodes, O1 to O4 satellite diodes, O5 and O6 VO(LF) DC output voltage range central and satellite diodes input impedance central diodes satellite diodes IOS channel pair matching central diodes, O1 to O4 satellite diodes, O5 and O6 B(-3dB) -3 dB bandwidth central diodes, D1 to D4 satellite diodes, S5 and S6 RF amplifier VO(RFP) DC output level RFP DC output level RFN differential RF output signal (Vo(RFP) - Vo(RFN)) single-sided RF output signal RF output impedance GSE = LOW or HIGH; Vi(D1 to D4) = 0 V GSE = LOW or HIGH; Vi(D1 to D4) = 0 V note 3 0.25 0.5 0.7 V 65 65 90 90 115 115 kHz kHz note 2 -1 -2 - - +1 +2 %FS %FS - - 3.1 3.1 - - pF pF GSE = LOW GSE = HIGH GSE = LOW GSE = HIGH note 1 0 0 -0.2 - - - 12 6 A A 40 10.5 75 20.5 47 12.5 92 24.5 54 15.0 106 28 k k k k
VDD(RF,LF) - 2.1 V
Zi
VO(RFN)
2.6
3.1
3.4
V
Vo(RF)(dif)
-
2
-
V
Vo(RF) Zo(RF)
note 3
- -
1 25
- -
V
1999 Aug 19
7
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
SYMBOL GRF PARAMETER RF path gain CONDITIONS note 4 GSE = LOW GSE = HIGH td(f)(RF) RF flatness delay GSE = LOW or HIGH; note 5 f < 5 MHz; RFBWS = LOW f < 10 MHz; RFBWS = open-circuit - - - - 2.0 1.0 9 21 10.5 22.5 12 24 MIN. TYP.
TZA1015
MAX.
UNIT dB dB
ns ns
f < 25 MHz; - RFBWS = HIGH BRF(-3dB) -3 dB bandwidth (RF signal) GSE = LOW or HIGH RFBWS = LOW RFBWS = open-circuit Vn(in-band)(rms) in-band noise (RMS value) RFBWS = LOW RFBWS = open-circuit RFBWS = HIGH VO(FTC) GFTC fast track count DC GSE = LOW or output level HIGH; note 6 fast track count gain f = 100 kHz; note 7 GSE = LOW GSE = HIGH BFTC(-3dB) fast track count -3 dB bandwidth minimum laser output current monitor input voltage N-type P-type Vo(LASER) tsw(on)(LASER) Ii(mon) laser output voltage range laser switch-on time monitor input current -10% - Io(LASER) = 100 mA - - - 16.5 26.5 220 - -
-
0.4
ns
10 20 50 1.0 1.4 2.1 1.5
- - - - - - 1.7
MHz MHz MHz mV mV mV V
RFBWS = HIGH - - - - 1.3
18 28 300
19.5 29.5 380
dB dB kHz
Laser supply (APC) Io(LASER)(min) Vi(mon) - - 100 mA
0.150 VDD(RF,LF) - 0.150 - 3 -
+13.5% - VDD(L) - 1.2 - 100
V V V ms nA
1999 Aug 19
8
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
SYMBOL Control inputs Zi(pd) pull-down input impedance (pin GSE) pull-up input impedance (pin PWRON) LOW-level input voltage pins GSE and PWRON pins GARF and RFBWS VIH HIGH-level input voltage pins GSE and PWRON pins GARF and RFBWS IIL LOW-level input current (pins GARF and RFBWS) HIGH-level input current (pins GARF and RFBWS) V DD(RF,LF) -------------------------1.4 VDD(RF,LF) - 0.5 - - - - -0.2 -0.2 - - - 150 - PARAMETER CONDITIONS MIN. TYP.
TZA1015
MAX.
UNIT
k
Zi(pu)
-
150
-
k
VIL
V DD(RF,LF) -------------------------3.3 +0.5
V V
VDD(RF,LF) + 0.2 V VDD(RF,LF) + 0.2 V -70 A
IIH
-
-
80
A
Vref voltage source VO IO DC output voltage output current range sink source ZO DC output impedance 1.5 - - - - - - -3 30 mA mA -10% V DD(RF,LF) ------------------------2 +10% V
1999 Aug 19
9
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
Notes
TZA1015
1. The output current can be increased but does not match the default input range of the servo system. 2. Matching defined in % of FS output per channel pairs (O1 - O2), (O3 - O4), (S5 - S6), at 13 and 23 of full output scale. 3. Vo(RFP) = Vo(RF); Vo(RFN) = -Vo(RF). 4. Gain is defined as: V o ( RFP ) V o ( RFN ) G RF = 20 x log ------------------- = 20 x log ------------------V i ( LF ) V i ( LF )
V i(D) All inputs assumed to be equal: V i(LF) = -------------- , where i = 1 to 4 and D means diode. 4 5. See Figs 3, 4 and 5. 6. Voltage is based on 2 PN junctions and is temperature dependent. V o ( FTC ) 7. Gain is defined as: G FTC = 20 x log ---------------------------------------( V i ( S5 ) - V i ( S6 ) )
handbook, halfpage
12
MGK357
G (dB) 11
(1)
9.00 td (ns) 8.75
handbook, halfpage
12
MGK358
G (dB) 11
14.5 td (ns) 14.0
(1)
(2)
10
(2)
8.50
10
13.5
9
8.25
9
13.0
8
8.00
8
12.5
7 10-1
1
10
f (MHz)
7.75 102
7 10-1
1
10
f (MHz)
12.0 102
(1) Gain. (2) Delay.
Definition of delay:
--------- 360 delay = -------------f
(1) Gain. (2) Delay.
Definition of delay:
--------- 360 delay = -------------f
Fig.3 Gain and delay for 50 MHz bandwidth.
Fig.4 Gain and delay for 20 MHz bandwidth.
1999 Aug 19
10
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
TZA1015
handbook, halfpage
12
MGK359
23 td (ns) 21
G (dB) 11
(2)
(1)
10
19
9
17
8
15
7 10-1
1
10
f (MHz)
13 102
(1) Gain. (2) Delay.
Definition of delay:
--------- 360 delay = -------------f
Fig.5 Gain and delay for 10 MHz bandwidth.
Table 1
Control inputs, conversion impedances and gain settings PIN GARF LOW open-circuit HIGH LOW open-circuit HIGH NOMINAL LF V/I CONVERSION (CENTRAL DIODES) 47 k 47 k 47 k 12.5 k 12.5 k 12.5 k NOMINAL LF V/I CONVERSION (SATELLITE DIODES) 92 k 92 k 92 k 24.5 k 24.5 k 24.5 k NOMINAL RF GAIN (dB) 7 10.5 15 19 22.5 27 NOMINAL FTC GAIN (dB) 14 18 22 24 28 32
PIN GSE LOW LOW LOW HIGH HIGH HIGH Table 2
Control inputs and RF bandwidth PIN RFBWS RF AMPLIFIER BANDWIDTH 10 MHz 20 MHz 50 MHz
LOW open-circuit HIGH
1999 Aug 19
11
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
APPLICATION INFORMATION
TZA1015
The circuits shown in Figs 6 and 7 are applications for the TZA1015 (HDALAS) with the SAA7370A (CD7) or the SAA7348 (ACE).
handbook, full pagewidth
from microprocessor(1) RFBWS LD
from microprocessor(1) GARF GSE RFN RFP GND VDD(RF) O1 O2 O3 O4 O5 O6 PWRON FTC 1 nF 1 nF R2(2) R1(2) 22 k C1(2) 22 k HFIN HFREF 100 nF 100 nF ISLICE Iref
1
28 27 26 25 24 23 22
14 18
MON D1 D2 OPIC D3 D4 S5 S6
LD 2 VDD(LASER) VDD(L) 3 100 nF CFIL 4 1 nF MON 5 D1 D2 D3 D4 S5 S6 VDD(LF) VCOM Vref 100 nF 6 7
15 17
VDD(RF, LF) 100 nF D1 D2 D3 D4 R1 R2 LDON 3
TZA1015
8 9 10 11 12 13 14 (HDALAS) 21 20 19 18 17 16 15
SAA7370A
4 5 7 8 9 64 6 VRL
MGK360
(CD7)
VDD(RF, LF)
100 nF Vref
6 x 220 pF
to microprocessor(3)
(1) Pins RFBWS, GARF and GSE can be microprocessor controlled but can also be fixed or switched by any other means. (2) For recommended values per speed see Table 3. (3) The FTC output is available for optional processing.
Fig.6 Application diagram with SAA7370A (CD7).
1999 Aug 19
12
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
TZA1015
handbook, full pagewidth
from microprocessor(1) RFBWS LD
from microprocessor(1) GARF GSE RFN RFP GND VDD(RF) O1 O2 O3 O4 O5 O6 PWRON FTC 22 nF 47 k 5 pF 68 nF R1(2) C1(2) HFIN
1
28 27 26 25 24 23 22
MON D1 D2 OPIC D3 D4 S5 S6
LD 2 VDD(LASER) VDD(L) 3 100 nF CFIL 4 1 nF MON 5 D1 D2 D3 D4 S5 S6 VDD(LF) VCOM Vref 6 7
9
VDD(RF, LF) 100 nF D1 D2 D3 D4 S1 S2 LDON FTCH 15
TZA1015
8 9 10 11 12 13 14 (HDALAS) 21 20 19 18 17 16 15
SAA7348
16 17 20 21 22 100 24 (ACE)
VDD(RF, LF)
100 nF Vref 100 nF
FTCL
25
MGK361
(1) Pins RFBWS, GARF and GSE can be microprocessor controlled but can also be fixed or switched by any other means. (2) For recommended values per speed see Table 4.
Fig.7 Application diagram with SAA7348 (ACE).
Table 3 N 1x 2x 4x 8x 10x
Recommended values of components per speed for application diagram of Fig.6 C1 47 pF 47 pF 22 pF 10 pF 8.2 pF R1 1 k 470 470 470 470 R2 1 k 470 470 470 470
Table 4
Recommended values of components per speed for application diagram of Fig.7 N 1x 2x 4x 8x C1 100 pF 47 pF 22 pF 22 pF 10 pF 6.8 pF R1 1 k 1 k 1 k 470 470 470
16x 18x
1999 Aug 19
13
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
PACKAGE OUTLINE SO28: plastic small outline package; 28 leads; body width 7.5 mm
TZA1015
SOT136-1
D
E
A X
c y HE vMA
Z 28 15
Q A2 A1 pin 1 index Lp L 1 e bp 14 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT136-1 REFERENCES IEC 075E06 JEDEC MS-013AE EIAJ EUROPEAN PROJECTION A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 18.1 17.7 0.71 0.69 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
ISSUE DATE 95-01-24 97-05-22
1999 Aug 19
14
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
TZA1015
Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1999 Aug 19
15
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TZA1015
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 19
16
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
NOTES
TZA1015
1999 Aug 19
17
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
NOTES
TZA1015
1999 Aug 19
18
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS)
NOTES
TZA1015
1999 Aug 19
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/03/pp20
Date of release: 1999
Aug 19
Document order number:
9397 750 06271


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